METHOD FOR MANUFACTURING CRYSTALLINE SEMICONDUCTOR MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a crystalline semiconductor material which can improve crystallinity more and a method for manufacturing a semiconductor device which uses the same.

SOLUTION: A noncrystalline film 14 is irradiated with pulses (energy beam E1) uniformly 150 times by using an XeCl excimer laser. The temperature at this time is high enough to partially melt crystal grains of silicon having a ä100} plane orientation in the vertical direction to a substrate 11 and also melt amorphous crystal grains or crystal grains of silicon having plane orientations other than ä100}. A crystal having a ä100} plane orientation is newly grown between a silicon oxide film 13 and liquid phase silicon and probabilistically combined to newly formed crystal grains having a ä100} plane orientation, which is repeated. Thus, formed is a square crystalline film which is preferentially oriented in the ä100} plane orientation in the vertical direction to the substrate 11 and has a sharp grain boundary.

COPYRIGHT: (C)2004,JPO