| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve the characteristics level of a TFT to provide the TFT optimal for pixel switching and high-speed driver driving in a driver/pixel integrated liquid crystal display device wherein a pixel area and a driver area are provided on a noncrystalline substrate. <P>SOLUTION: Semiconductor thin films formed in the pixel area and the driver area are irradiated with energy beams for outputting energy continuously for the time to crystalize the semiconductor thin films and when using the semiconductor thin films as active semiconductor thin films of thin film transistors, the number of times irradiating the semiconductor thin film formed in the pixel area with the energy beam is increased rather than the number of times of irradiating the semiconductor thin film formed in the driver area. <P>COPYRIGHT: (C)2004,JPO</p> |
| 申请公布号 |
JP2004087620(A) |
申请公布日期 |
2004.03.18 |
| 申请号 |
JP20020244112 |
申请日期 |
2002.08.23 |
| 申请人 |
FUJITSU LTD |
发明人 |
TAKEI MICHIKO;YOSHINO KENICHI;HARA AKITO |
| 分类号 |
G02F1/1368;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L29/786;G02F1/136 |
主分类号 |
G02F1/1368 |
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