| 摘要 |
<p>1505105 Integrated circuits RCA CORPORATION 22 May 1975 [23 July 1974] 22307/75 Heading H1K An I.C. comprises a monocrystalline insulating substrate carrying a plurality of discrete semiconductor islands each containing a circuit element, one of the islands being of polycrystalline material and having heavily doped end portions and a less heavily doped intermediate portion of the same conductivity type. As described an I.C. comprising P and N channel M.I.S. transistors and a polycrystalline island is formed on a common substrate of 1102 oriented sapphire by first forming discrete islands of epitaxial N and P type silicon and polycrystalline silicon by successive deposition and pattern etching of these materials. After removal of oxide used in the final etching step and deposition overall first of an oxide (or nitride) layer and then of a polysilicon layer the layers are successively etched to define gate electrodes and underlying gate insulation centrally of each island. Heavily phosphorus doped silica 45 (Fig. 13) is next deposited overall from silane and confined to the epitaxial P-type island by photoresist etching and the entire surface then coated with heavily boron doped silica 47. Heating causes boron and phosphorus to diffuse to form source and drain regions as shown in each island. Finally the doped oxide layers are apertured over these regions and metal deposited to form source and drain electrodes and further electrodes over the polycrystalline silicon gates. Alternatively the oxide layers are removed, metal electrodes provided on the sources and drains, and further gate electrodes optionally provided on insulation on the polysilicon gates. Any of the components on the substrate may be utilized in a current feedback loop to convert a dynamic shift register into a static one (Fig. 16, not shown).</p> |
