发明名称 ORGANIC ELECTRON DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a protective film optimal for an organic electron element or the like with high bending stress endurance and a high dampproof property. SOLUTION: A second protective film 22 is formed by covering an organic electron element as a protective film of the organic electron element, and a first protective film 20 is formed between the organic electron element and a substrate 10. Either or both of the first and second protective films 20, 22 is of a laminated structure pinching a vapor phase epitaxy inorganic film 26 with at least plasma polymerization films 24. By pinching the vapor phase epitaxy inorganic film 26 with the plasma polymerization films 24, stress generated against the vapor phase epitaxy inorganic film 26 can be cancelled out to improve the bending stress endurance of the vapor phase epitaxy inorganic film 26. At least the second protective film 22 adopting the laminated structure is, on one hand, of a total film thickness enough to cover the organic electron element, the film thickness of the vapor phase epitaxy inorganic film 26 is made as thin as possible, and on the other hand, to improve the bending stress endurance or the like of the inorganic film, which enables the maintenance of a high dampproof property for a long period of time. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004087253(A) 申请公布日期 2004.03.18
申请号 JP20020245447 申请日期 2002.08.26
申请人 TOYOTA CENTRAL RES & DEV LAB INC 发明人 AKETO KUNIO;NODA KOJI;MIURA ATSUSHI;FUJIKAWA HISAYOSHI;TAGA YASUNORI
分类号 G02F1/1333;H01L51/50;H05B33/02;H05B33/04;H05B33/14;(IPC1-7):H05B33/04;G02F1/133 主分类号 G02F1/1333
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