| 摘要 |
PROBLEM TO BE SOLVED: To provide a method or the like for manufacturing a semiconductor device which enables high precision patterning by using a resist pattern, whose wall surfaces are smoothened to reduce its roughness. SOLUTION: The method for manufacturing a semiconductor device comprises processes for forming a resist pattern on a base layer; smoothing, at least the wall surfaces of the resist pattern by applying a resist pattern smoothing material to the surface of the resist pattern and by controlling at least either one of coating thickness and heating temperature, including heating and development; and patterning the base layer by etching, using the smoothed resist pattern. A maximum opening size Dmax(nm) and a minimum opening size Dmin(nm) of the smoothed resist pattern should, preferably, fall within±5% with respect to a target opening size Dav.(nm), and an average opening size Dav.(nm) of the smoothed resist pattern should satisfy the relation Dav.(nm)≥D(nm)×(90/100). COPYRIGHT: (C)2004,JPO |
