| 摘要 |
In a semiconductor memory including a dynamic random access memory, a memory cell of the dynamic random access memory includes: a semiconductor pillar (a silicon pillar); a capacitor in which one side of the silicon pillar is used as a charge accumulation electrode; and a longitudinal insulated gate static induction transistor in which the other side of the silicon pillar is used as an active region (a source region, a channel formation region and a drain region), and a bit line is connected to the silicon pillar.
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