发明名称 Optimized scintillator and pixilated photodiode detector array for multi-slice CT x-ray detector using backside illumination
摘要 A photodiode detector array includes a layer of intrinsic semiconductor material having a first doped layer on a first surface of a first conductivity type and an array of photodiodes having respective doped regions on a second surface of an opposite conductivity type. Electrical contacts on the second surface respectively contact the doped regions and convey electrical signal therefrom. Conductors extend from the electrical contacts to convey the electrical signals to output terminals of the array. A scintillator is optically coupled to the layer of intrinsic semiconductor material at the first surface thereof and can be pixelated, with individual scintillator elements aligned with and corresponding to the doped regions of the photodiode. The photodiode detector array can be mounted to a rigid printed wiring board or to a flat bottom wall surface of the scintillator.
申请公布号 US6707046(B2) 申请公布日期 2004.03.16
申请号 US20020035266 申请日期 2002.01.03
申请人 GENERAL ELECTRIC COMPANY 发明人 POSSIN GEORGE EDWARD;HOFFMAN DAVID MICHAEL;SHEN BING;DUCLOS STEVEN JUDE
分类号 G01T1/24;G21K1/12;H01L27/146;(IPC1-7):G01T1/24 主分类号 G01T1/24
代理机构 代理人
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