发明名称 |
RADIO FREQUENCY POWER PURGE METHOD OF PLASMA CHAMBER |
摘要 |
PURPOSE: A radio frequency(RF) power purge method of a plasma chamber is provided to minimize damage to a wafer by preventing the charge particles from losing their charges and being dropped to the wafer when RF power turns off. CONSTITUTION: The plasma chamber is driven by RF power. An RF power purge process is performed when the RF power turns off so that the charge particles are pumped out while their charges are not lost. The RF power purge process is rapidly performed while a throttle valve for controlling the pressure inside the plasma chamber is maximumly open.
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申请公布号 |
KR20040022346(A) |
申请公布日期 |
2004.03.12 |
申请号 |
KR20020053621 |
申请日期 |
2002.09.05 |
申请人 |
ANAM SEMICONDUCTOR., LTD. |
发明人 |
OH, SANG HUN |
分类号 |
H01L21/02;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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主权项 |
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地址 |
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