| 摘要 |
PROBLEM TO BE SOLVED: To materialize a mixing and matching in which such a semiconductor device that, for example, a demanded line width of a middle layer reaches 0.15μm is manufactured at a high throughput. SOLUTION: A first illumination system (IL1) for illuminating the entire first pattern region on a first mask (R) by KrF excimer laser beams, and a first projection optical system for forming a pattern image on the first mask on a photosensitive substrate (W), are provided. A first aligner for collectively and stationarily exposing a first pattern region on the first mask to a specific divisional region on the photosensitive substrate, a second illumination system (IL2) for illuminating a partial region of a second pattern region on a second mask by ArF excimer laser beams, and a second projection optical system for forming a pattern image on the second mask on the photosensitive substrate, are provided. A second aligner is provided for moving the second mask and the photosensitive substrate relative to the second projection optical system, while scanning and exposing a pattern on the second mask in the specific divisional region on the photosensitive substrate. COPYRIGHT: (C)2004,JPO |
