| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of high output operation at a high frequency band with a small drain capacitance. SOLUTION: This semiconductor device comprises a semiconductor substrate, a gate electrode 3 arranged on the semiconductor substrate through an insulating film, a drain region in which first low concentration impurity diffusion layers and dot-shaped second high concentration impurity diffusion layers 45 are arranged in parallel to the gate electrode 3 at a plurality of positions, an interlayer insulating film 9a having dot-shaped contact holes 53 arranged inside by given intervals from the respective dot-shaped peripheries on the second high concentration impurity diffusion layers 45, metal wiring for the drain formed on the interlayer insulating film 9a while burying the dot-shaped contact holes 53 therein in the drain region, and a source region composed of a third impurity diffusion layer 41. COPYRIGHT: (C)2004,JPO
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