| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor structure which can control change in capacitance for variation of leak current and applied voltage without excessive increase in the film thickness. SOLUTION: The capacitor structure comprises a lower electrode film 4 consisting of a metal film or a metal compound film, an upper electrode film 8 consisting of a metal film or a metal compound film, and a siliconless high dielectric material film 6 provided between the lower electrode and upper electrode and does not include silicon atom. In addition to the siliconless high dielectric material film, at least one layer of a silicon-doped high dielectric material film 60 including the silicon atom is also provided. Accordingly, change in the capacitance for variation of leak current and applied voltage can be controlled. COPYRIGHT: (C)2004,JPO
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