| 摘要 |
PURPOSE: A SONOS(polySilicon Oxide Nitride Oxide Silicon) structure of a semiconductor device is provided to improve retention property by forming a dielectric film with high dielectric constant and low trap density between a nitride layer and a tunnel oxide layer. CONSTITUTION: In a SONOS structure including a block oxide layer, a nitride layer and a tunnel oxide layer, a dielectric film is formed between the nitride layer and the tunnel oxide layer. The dielectric film has a low trap density and a high dielectric constant. Also, the energy band gap of the dielectric film is higher than that of the nitride layer and lower than that of the block oxide layer.
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