| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device and a method of manufacturing the same. <P>SOLUTION: In the method of manufacturing an integrated circuit memory device, a large number of storage node contact holes are formed on an interlayer insulating film and the storage node contact holes are arranged linearly at least in one direction. Further, a large number of storage node contact plugs 216 are formed on the storage node contact holes. Moreover, a material layer has a large number of landing pad holes for exposing the large number of storage node contact plugs 216, and is formed on the interlayer insulating film. The large number of landing pad holes are arranged non-linearly at least in one direction. Furthermore, landing pads 218 connected to the storage node contact plugs 216 are formed on the large number of landing pad holes. Additionally, storage nodes 222 connected to the large number of storage node contact plugs 216 are formed thereon. <P>COPYRIGHT: (C)2004,JPO |
