| 摘要 |
PROBLEM TO BE SOLVED: To provide a III-V group compound semiconductor laser element conveniently at a low cost where impurities to be doped in a current constriction layer are diffused in an active layer or the like and no degradation of characteristic occurs. SOLUTION: The III-V group compound semiconductor laser element is provided with a substrate that is provided with a main surface where a plane orientation is within 20 degrees in the tilt angle from (100) plane to [011] direction and an inclined surface inclining in the [011] direction from the main surface, a laminated part for light emission that contains at least an active layer and a clad layer on the substrate, and a current constriction layer containing a IV group impurity. The current constriction layer has an n-type conductivity in the upper area of the main surface of the board, and it has a p-type conductivity in the upper area of the inclined surface of the board. COPYRIGHT: (C)2004,JPO
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