发明名称 STANDARD CELL
摘要 PROBLEM TO BE SOLVED: To provide a standard cell which does not result in an increase in a cell area, assures a wider variable range of current driving capability and realize optimization of characteristics, in comparison with the prior art. SOLUTION: When PN ratio (4Wp/2Wn) = 2, the number of PMOS transistors and NMOS transistors are set asymmetrically to 4:2 and the gate widths Wp of the PMOS transistors 3 to 6 and the gate widths Wn of the NMOS transistors 7, 8 are always set equally to keep the PN ratio (4Wp/2Wn) = 2 unchanged. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004079694(A) 申请公布日期 2004.03.11
申请号 JP20020236316 申请日期 2002.08.14
申请人 FUJITSU LTD 发明人 IIYORI HIDEKI;TAKEUCHI ATSUSHI;KAMATA YUTAKA;HASHIMOTO TETSUTARO
分类号 H01L21/822;H01L21/82;H01L21/8238;H01L27/04;H01L27/092;(IPC1-7):H01L21/82;H01L21/823 主分类号 H01L21/822
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