| 摘要 |
A method including forming at least two monocrystalline layers of different resistance values in a surface of a substrate, protecting an area of the surface of the substrate, forming a trench in a non-protect area of the surface of the substrate to a body of the substrate, anodically etching a portion of the substrate body; and oxidizing the anodically etched portion of the substrate body. An apparatus including a device substrate having an active area including an epitaxial layer over an oxidized portion of the body of the substrate, wherein the active area is defined by a trench formed in the substrate to a point beyond the epitaxial layer; and at least one device formed in or on the active area of the device substrate.
|
