发明名称 |
Differential sense amplifier for multilevel non-volatile memory |
摘要 |
A digital multilevel non-volatile memory includes a massive sensing system that includes a plurality of sense amplifiers disposed adjacent subarrays of memory cells. The sense amplifier includes a high speed load, a wide output range intermediate stage and a low impedance output driver. The high speed load provides high speed sensing. The wide output range provides a sensing margin at high speed on the comparison node. The low impedance output driver drives a heavy noisy load of a differential comparator. A precharge circuit coupled to the input and output of the sense amplifier increases the speed of sensing. A differential comparator has an architecture that includes analog bootstrap. A reference sense amplifier has the same architecture as the differential amplifier to reduce errors in offset. The reference differential amplifier also includes a signal multiplexing for detecting the contents of redundant cells and reference cells.
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申请公布号 |
US2004047184(A1) |
申请公布日期 |
2004.03.11 |
申请号 |
US20020241266 |
申请日期 |
2002.09.10 |
申请人 |
TRAN HIEU VAN;FRAYER JACK EDWARD;SAIKI WILLIAM JOHN;BRINER MICHAEL STEPHEN |
发明人 |
TRAN HIEU VAN;FRAYER JACK EDWARD;SAIKI WILLIAM JOHN;BRINER MICHAEL STEPHEN |
分类号 |
G11C7/06;G11C11/56;G11C16/28;(IPC1-7):G11C16/06 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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