| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering target material of strontium ruthenate for stably forming a sputtering film of a lower part electrode of a high quality, by densifying the sputtering target material for forming a film of the lower part electrode of a dielectric capacitor. <P>SOLUTION: This sputtering target material has a composition comprising strontium ruthenate and one or two added sintering auxiliaries of CuO and GeO<SB>2</SB>, and thereby has a density of the sputtering target enhanced into 80% or higher. The method for manufacturing the target comprises pressure-forming the mixed powders and baking it in atmospheric air. <P>COPYRIGHT: (C)2004,JPO |
