| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of decreasing the deformation or crack of a wafer when machining the semiconductor wafer in a predetermined thickness while maintaining a function of a passivation film. <P>SOLUTION: A first electrode pattern 106 (barrier metal) extends from both cell to the upper surface of an insulation film 103 between cells of a vertical type semiconductor device. The passivation film 109 is formed on each pattern 106 between the cells. A second electrode pattern 107 (aluminum) is formed on each pattern 106 so as to be positioned adjasent to the film 109. <P>COPYRIGHT: (C)2004,JPO |
