| 摘要 |
A nonvolatile semiconductor memory is disclosed, which comprises first and second nonvolatile memory cells, first and second bit lines, first and second column selection transistors, a first column resetting and bit line testing transistor connected to a first node to which the first and second column selection transistors are connected, a sense amplifier which amplifies a cell data on the first node, and a control circuit which controls to turn the resetting and testing transistor on to reset a potential of the first node, after data the first or second memory cell selected by turning the first or second column selection transistor on has been sensed by the sense amplifier in a first time duration, and controls to electrically separate the sense amplifier from the first node while the first and second column selection transistors and the resetting and testing transistor are turned on simultaneously in a second time duration.
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