发明名称 Method for fabricating semiconductor device
摘要 A method for fabricating a semiconductor device includes the steps of: forming an insulating film on a conductive pattern formed on a substrate; forming a resist pattern on the insulating film; performing etching to the insulating film using the resist pattern as a mask to form in the insulating film an opening at which part of the surface of the conductive pattern is exposed; forming an antioxidant layer on the part of surface of the conductive pattern exposed while removing the resist pattern; and depositing a conductive film on the conductive pattern from which the antioxidant layer has been removed.
申请公布号 US2004048462(A1) 申请公布日期 2004.03.11
申请号 US20030648482 申请日期 2003.08.27
申请人 JOEI MASAHIRO 发明人 JOEI MASAHIRO
分类号 H01L21/3065;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/44;H01L21/476 主分类号 H01L21/3065
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