发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device includes the steps of: forming an insulating film on a conductive pattern formed on a substrate; forming a resist pattern on the insulating film; performing etching to the insulating film using the resist pattern as a mask to form in the insulating film an opening at which part of the surface of the conductive pattern is exposed; forming an antioxidant layer on the part of surface of the conductive pattern exposed while removing the resist pattern; and depositing a conductive film on the conductive pattern from which the antioxidant layer has been removed.
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申请公布号 |
US2004048462(A1) |
申请公布日期 |
2004.03.11 |
申请号 |
US20030648482 |
申请日期 |
2003.08.27 |
申请人 |
JOEI MASAHIRO |
发明人 |
JOEI MASAHIRO |
分类号 |
H01L21/3065;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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