Etching metal layer for semiconductor device, comprises etching exposed portions of metal layer with etching gas formed by mixing chlorine and nitrogen

摘要

A metal layer (24) is etched by forming a mask pattern on a metal layer. The mask pattern exposes portions of the metal layer. The exposed portions of the metal layer are etched with an etching gas formed by mixing chlorine and nitrogen. An independent claim is also included for a metallization method for a semiconductor device, comprising forming a mask pattern on an interconnection layer (20) including a metal layer, and forming an interconnection pattern by etching with an etching gas formed by mixing chlorine (Cl2) and nitrogen (N2) using the mask pattern as an etch mask.