| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device including a method of forming a barrier film by which the increase of a resistance value in a metal wiring layer due to the barrier film can be suppressed, when the metal wiring layer is formed using a dual damascene method. SOLUTION: This method for manufacturing the semiconductor device includes a process for forming a carbonized metal membrane 23 for preventing diffusion of the metal in a boundary between an organic interlayer insulating film 22 and a metal film 24 by forming the metal film 24 on the organic interlayer insulating film 22 which is formed over a semiconductor substrate, and a process for leaving the carbonized metal membrane 23 on the organic interlayer insulating film 22 by selectively removing the metal film 24 to the carbonized metal membrane 23. COPYRIGHT: (C)2004,JPO
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