METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a nonvolatile memory device is provided to be capable of preventing step between an isolation layer and a substrate in SONOS(Si-ONO-Si) structure. CONSTITUTION: A shallow trench isolation layer(102') is formed in a semiconductor substrate(100). An edge portion is formed by planarizing the surface of the trench isolation layer and the substrate. A fluidity layer(106') as SOG(Spin On Glass) is filled in the edge portion of the trench isolation layer. An ONO(Oxide-Nitride-Oxide) pattern(108') is formed on the substrate. A conductive pattern(110) as a gate electrode is formed on the ONO pattern.