| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and method for a plasma treatment by which a fine plasma treatment can be performed at a high speed without causing irregularity using a small amount of gas. SOLUTION: The plasma treatment device is constituted to treat the surface of a wafer 9 by utilizing reactive etching using a low-temperature plasma under a pressurized condition or under the atmospheric pressure. The treatment device is provided with a chamber 4 the inside of which can be controlled to a prescribed pressure and which is provided with a gas supply device 6, a gas intake pipeline 2, and a vacuum pump 3, an electrode section arranged in the chamber 4, and wafer moving mechanisms 10-12 which are arranged in the chamber 4 to face the electrode section 5 and move the waver 9. In the electrode section 5, an annular space 5d is formed and a gas supplied into the space 5d is jetted out from a plurality of jetting outlets 5e provided at the lower end of the space 5d. When this plasma treatment device is used, fine treatment can be performed and the surface of a hardly grindable material can be treated to a flat surface or specular surface at a high speed with little irregularity in treatment and a small gas consumption without generating white turbidity. COPYRIGHT: (C)2004,JPO
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