发明名称 THIN FILM TRANSISTOR SUBSTRATE
摘要 PURPOSE: A thin film transistor substrate is provided to prevent a contact resistance between an auxiliary data pad and a probe tip from being increased in the event of a gross test to secure reliability of the test. CONSTITUTION: A thin transistor substrate includes an insulating substrate(110), a gate line, a gate electrode(121) and a gate pad(125) formed on the insulating substrate, a gate insulating layer(140) formed on the substrate, and a semiconductor layer(154) formed on a portion of the gate insulating layer corresponding to the gate electrode. The thin film transistor substrate further includes a data line intersecting the gate line, source and drain electrodes(173,175), a data pad(177), and a passivation layer(180) that is formed on the data line and has the first contact hole exposing the drain electrode, the second contact hole exposing the gate pad and the third contact hole exposing the data pad. The thin film transistor also has a pixel electrode(190) formed on the passivation layer and connected to the drain electrode through the first contact hole, an auxiliary gate pad(95) formed on the passivation layer and connected to the gate pad through the second contact hole, and an auxiliary data pad(97) formed on the passivation layer and connected to the data pad through the third contact hole. The auxiliary data pad has protrusions and depressions.
申请公布号 KR20040021068(A) 申请公布日期 2004.03.10
申请号 KR20020052509 申请日期 2002.09.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, GWON YEONG;KIM, WON JU;LIM, SEUNG TAEK
分类号 G02F1/136 主分类号 G02F1/136
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