Semiconductor memory

摘要

The semiconductor memory of this invention includes an MFMIS transistor including a field effect transistor (10) and a ferroelectric capacitor (20) formed above the field effect transistor. The semiconductor memory has a characteristic that a value of ( sigma - p) is substantially not changed with time in a relational expression, V = (d/ epsilon 0) x ( sigma -p), which holds among a potential difference V between an upper electrode and a lower electrode, a surface density of charge sigma of a ferroelectric film, polarization charge p of the ferroelectric film, a thickness d of the ferroelectric film and a dielectric constant epsilon 0 of vacuum when a data is written in the MFMIS transistor and the ferroelectric film is in a polarized state.