发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.
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申请公布号 |
US6703264(B2) |
申请公布日期 |
2004.03.09 |
申请号 |
US20010852063 |
申请日期 |
2001.05.08 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SAKAMA MITSUNORI;FUKADA TAKESHI |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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