发明名称 |
Method of forming layers of oxide on a surface of a substrate |
摘要 |
A method of forming oxide layers of different thickness on a substrate is described, wherein the oxide layers preferably serve as gate insulation layers of field effect transistors. The method allows to form very thin, high quality oxide layers with a reduced number of masking steps compared to the conventional processing, wherein the thickness difference can be maintained within a range of some tenths of a nanometer. The method substantially eliminates any high temperature oxidations and is also compatible with most chemical vapor deposition techniques used for gate dielectric deposition in sophisticated semiconductor devices.
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申请公布号 |
US6703278(B2) |
申请公布日期 |
2004.03.09 |
申请号 |
US20020208308 |
申请日期 |
2002.07.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WIECZOREK KARSTEN;GRAETSCH FALK;KRUEGEL STEPHAN |
分类号 |
H01L21/28;H01L21/311;H01L21/314;H01L21/8234;H01L21/8238;H01L29/51;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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