发明名称 Methods of forming spaced conductive regions, and methods of forming capacitor constructions
摘要 The invention includes a method of forming spaced conductive regions. A construction is formed which includes a first electrically conductive material over a semiconductor substrate. The construction also includes openings extending through the first electrically conductive material and into the semiconductor substrate. A second electrically conductive material is formed within the openings and over the first electrically conductive material and is in electrical contact with the first electrically conductive material. The second electrically conductive material is subjected to anodic dissolution while the first electrically conductive material is electrically connected to a power source. The second electrically conductive material within the openings becomes electrically isolated from the first electrically conductive material as the dissolution progresses, and some of the second electrically conductive material remains within the openings in the substrate as spaced conductive regions after the anodic dissolution.
申请公布号 US6703272(B2) 申请公布日期 2004.03.09
申请号 US20020177054 申请日期 2002.06.21
申请人 发明人
分类号 H01L21/02;H01L21/8242;(IPC1-7):H01L21/824 主分类号 H01L21/02
代理机构 代理人
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