| 摘要 |
An infrared detecting device possible to improve SN ratio, which is provided with a semiconductor substrate, a diaphragm set on the semiconductor substrate, a thermopile formed on the diaphragm by arranging a plurality of thermocouples composed of p-type polysilicon and n-type polysilicon in a row and electrically connecting them each other in series, and a heat absorption film formed on the central portion through an insulation layer, and sectional areas of the p-type and n-type polysilicons between hot and cold junctions of each of the thermocouples are made different from each other.
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