发明名称 |
High temperature drop-off of a substrate |
摘要 |
A substrate to be processed in a high temperature processing chamber is preheated to avoid the problems associated with thermal shock when the substrate is dropped onto a heated susceptor. Preheating is effected by holding the substrate over a susceptor maintained at or near the processing temperature until the temperature of the substrate approaches the processing temperature. Thus, wafer warping and breakage are greatly reduced, and wafer throughput is improved because of time saved in maintaining the susceptor at constant temperature without cool down and reheat periods.
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申请公布号 |
US6704496(B2) |
申请公布日期 |
2004.03.09 |
申请号 |
US20020291897 |
申请日期 |
2002.11.08 |
申请人 |
ASM AMERICA, INC. |
发明人 |
JACOBSON PAUL;RAAIJMAKERS IVO;AGGARWAL RAVINDER;HARO ROBERT C. |
分类号 |
H01L21/285;(IPC1-7):F26B3/30 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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