发明名称 Low-resistivity microelectromechanical structures with co-fabricated integrated circuits
摘要 A microfabricated device includes a substrate having a device layer and substantially filled, isolating trenches; a doped region of material formed by photolithographically defining a region for selective doping of said device layer, selectively doping said region, and thermally diffusing said dopant; circuits on said device layer formed using a substantially standard circuit technology; and at least one structure trench in the substrate which completes the definition of electrically isolated micromechanical structural elements.
申请公布号 US6703679(B1) 申请公布日期 2004.03.09
申请号 US20000612482 申请日期 2000.07.07
申请人 ANALOG DEVICES, IMI, INC. 发明人 LEMKIN MARK A.;CLARK WILLIAM A.;JUNEAU THOR;ROESSIG ALLEN W.
分类号 B81B7/02;(IPC1-7):H01L29/00 主分类号 B81B7/02
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