发明名称 |
Low-resistivity microelectromechanical structures with co-fabricated integrated circuits |
摘要 |
A microfabricated device includes a substrate having a device layer and substantially filled, isolating trenches; a doped region of material formed by photolithographically defining a region for selective doping of said device layer, selectively doping said region, and thermally diffusing said dopant; circuits on said device layer formed using a substantially standard circuit technology; and at least one structure trench in the substrate which completes the definition of electrically isolated micromechanical structural elements.
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申请公布号 |
US6703679(B1) |
申请公布日期 |
2004.03.09 |
申请号 |
US20000612482 |
申请日期 |
2000.07.07 |
申请人 |
ANALOG DEVICES, IMI, INC. |
发明人 |
LEMKIN MARK A.;CLARK WILLIAM A.;JUNEAU THOR;ROESSIG ALLEN W. |
分类号 |
B81B7/02;(IPC1-7):H01L29/00 |
主分类号 |
B81B7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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