发明名称 |
Semiconductor device having serially connected memory cell transistors provided between two current terminals |
摘要 |
A semiconductor device exhibits a stable driving force and high performance reliability. The semiconductor device has at least one transistor having a gate insulating film formed on a element region in a semiconductor substrate, a gate electrode formed on the gate insulating film, and a diffused layer in element regions on both sides of the gate electrode. The device also has a barrier insulating film formed so as to cover the transistor and the diffused layer. The height from a surface of the semiconductor substrate to the barrier insulating film is greater than the height from the surface, of the interface between the gate insulating film and the gate electrode.
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申请公布号 |
US6703669(B1) |
申请公布日期 |
2004.03.09 |
申请号 |
US20000714228 |
申请日期 |
2000.11.17 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
GODA AKIRA;SHIMIZU KAZUHIRO;SHIROTA RIICHIRO;ARAI NORIHISA;KOIDO NAOKI;ARITOME SEIICHI;MARUYAMA TOHRU;HAZAMA HIROAKI;IIZUKA HIROHISA |
分类号 |
G11C16/04;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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