发明名称 Non-volatile semiconductor memory apparatus
摘要 The invention achieves a high speed access when shifting to an active mode from a standby mode, in particular immediately after shifting to a read, and reduces the current consumption at the time of standby. A strong charge pump generates 5.0V and a power supply voltage of 8.0V. The power supply voltage is supplied to constant voltage circuits. The constant voltage circuits generate voltages VPBL, VPYS, VPCGL, VPCGL, VPCGH and VPCGH, respectively, according to the respective read, program and erase operation modes. The constant voltage circuit that operates in active modes consumes a large amount of current when it supplies the voltage VPCGH. In contrast, the constant voltage circuit operates with a low current consumption and generates the voltage VPCGH in the standby mode. With the voltage VPCGH that is generated by the constant voltage circuit in the standby mode, a high speed access is possible when shifting from the standby mode to the active mode, and in particular, immediately after shifting to a read mode. Also, the current consumption in the standby mode can be substantially reduced.
申请公布号 US6704224(B2) 申请公布日期 2004.03.09
申请号 US20020246727 申请日期 2002.09.19
申请人 SEIKO EPSON CORPORATION 发明人 NATORI KANJI
分类号 G11C16/06;G11C5/14;G11C7/22;G11C16/04;G11C16/30;(IPC1-7):G11C16/04 主分类号 G11C16/06
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