发明名称 POSITIVE RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition which has excellent transmitting properties for radiation, in particular, deep UV light and excimer laser light such as KrF and ArF, high sensitivity, high resolution, heat resistance, characteristics relating to the width of the focal depth, pattern shape degradation and storage stability of the resist solution and which can form a resist pattern of an excellent profile without dependence on a substrate, and to provide an acid generating agent for a resist suitable to be used for the above positive resist composition. <P>SOLUTION: The composition essentially comprises: (A) a resin component which has its solubility in an alkali aqueous solution increased by the effect of an acid; and (B) a compound which generates an acid by the irradiation of radiation. As for the component (B), a mixture of bis(cyclohexylsulfonyl)diazomethane and bis(2,4-dimethylphenylsulfonyl)diazomethane is used. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004070366(A) 申请公布日期 2004.03.04
申请号 JP20030290693 申请日期 2003.08.08
申请人 TOKYO OHKA KOGYO CO LTD 发明人 SATO KAZUFUMI;NITTA KAZUYUKI;YAMAZAKI AKIYOSHI;SAKAI TOMOAKI;NAKAYAMA TOSHIMASA
分类号 G03F7/039;C08F2/54;G03F7/004;H01L21/027 主分类号 G03F7/039
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