| 摘要 |
PROBLEM TO BE SOLVED: To reduce the area of an LSI by reducing the area of a power supply wiring region while stable power supply is ensured. SOLUTION: In an n-type well potential power supply region 109 connected with a VDD wiring 105, for example, impurity concentration of a high concentration n-type impurity diffusion layer 112 which constitutes the region 109 is made higher than that of a source/drain region 104 formed of the high concentration n-type impurity diffusion layer, and resistance value is made small. Similarly, a p-type well potential power supply region 110 connected with a VSS wiring 106, for example, impurity concentration of a high concentration p-type impurity diffusion layer which constitutes the region 110 is made higher than that of a source/drain region 103 formed of the high concentration p-type impurity diffusion layer, and resistance value is made small. By making resistance values of the well potential power supply regions 109, 110 small, stable power supply can be ensured even if wiring width of the VDD wiring 105 and the VSS wiring 106 which are formed of wiring layers is reduced. COPYRIGHT: (C)2004,JPO
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