| 摘要 |
PROBLEM TO BE SOLVED: To provide a sample producing method which can produce an in-line test sample, without contaminating wafers and bring the wafer back to a production line thereby contributing to the production. SOLUTION: In the sample producing method, a groove section 12 is formed by etching / removing the periphery of a region, including a prescribed test point 7 disposed on the surface of the semiconductor wafer 14 treated in prescribed processes in a semiconductor device production line, and the region including the prescribed test point 7 is made thin. Then, a film stack, composed of an SiN film 15 and an SiO<SB>2</SB>film 16, is formed so as to cover the surface of the semiconductor wafer including the thinned region and the groove section 12. Next, the thinned region is cut out, by using a focused ion beam method and brought out by using a needle tip 18 of a manipulator device from the semiconductor wafer 14. Then, after removing the SiO<SB>2</SB>film 16 on the side of the semiconductor wafer, an Si-oxidized film is newly formed in the groove section 12, and the semiconductor wafer 14 is brought back to the production line. COPYRIGHT: (C)2004,JPO
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