发明名称 |
Semiconductor device and fabrication method therefor |
摘要 |
With a stopper layer 19 as an etching stopper, a second groove 14a and a contact hole 13a are formed. Copper is buried inside the second groove 14a and the contact hole 13a, thereby forming a plug layer 22 and an overlying wiring layer 21 connected to an underlying wiring layer 17 via the plug layer 22. The stopper layer 19 is comprised of Si, C and N as essential components. First and second cap layers 18 and 23 are also comprised of Si, C and N as essential components.
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申请公布号 |
US2004041266(A1) |
申请公布日期 |
2004.03.04 |
申请号 |
US20030380038 |
申请日期 |
2003.09.12 |
申请人 |
AKAHORI TAKASHI;CHUNG GISHI;KAWAMURA KOHEI |
发明人 |
AKAHORI TAKASHI;CHUNG GISHI;KAWAMURA KOHEI |
分类号 |
H01L21/314;H01L21/768;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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