NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which can set wider range of wavelength of the light to be emitted and received.

SOLUTION: The light emitting device is provided with a light emitting layer formed of a nitride semiconductor. The light emitting layer is formed of a semiconductor of irregular structure realized by irregularly changing composition or arrangement of element or combination of these factors. Accordingly, the light of longer wavelength can be emitted in comparison with the semiconductor which is formed of the same composition in place of irregular structure.

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