| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photovoltaic element which has superior characteristics without causing damage to a transparent electrode or an amorphous n-type layer serving as the underlying layer of a microcrystal p-type layer. <P>SOLUTION: A method of manufacturing the photovoltaic element 20 equipped with a cell 21 is performed as follows. Silicon-containing material gas and hydrogen gas are supplied between a substrate 25 and an electrode at the same time, high-frequency radio waves of 10 MHz to 300 MHz are applied to generate plasma gas for successively laminating a microcrystal p-type layer 13, a microcrystal i-type layer 14, and a microcrystal n-type layer 15, each formed of microcrystal silicon, on the front surface of a substrate 25 to form the cell 21. The microcrystal p-type layer 13 is formed through forming an initial layer of microcrystal silicon before forming a bulk layer 13b the use of a high-frequency power lower than that used for forming the bulk layer 13b, or at a substrate temperature lower than that when the bulk layer 13b is formed, or by the use of plasma gas which is higher in pressure than that when the bulk layer 13b is formed. <P>COPYRIGHT: (C)2004,JPO</p> |
