SEMICONDUCTOR FILM AND ITS FORMING PROCESS, SEMICONDUCTOR DEVICE AND DISPLAY EMPLOYING THAT SEMICONDUCTOR FILM

摘要

PROBLEM TO BE SOLVED: To form a semiconductor film of such a crystallinity as crystal faces parallel with the film face are oriented to ä100} face. SOLUTION: When energy having a specified energy density is imparted to a silicon film, a crystal silicon where a substantial ä100} face is oriented preferentially in parallel with the film face is generated. A catalytic substance is then introduced to the region of the silicon film where the crystal silicon is generated using the crystal silicon as a crystal seed and crystal is grown in the lateral direction thus obtaining a crystalline silicon film in which the entire semiconductor film is oriented preferentially to substantial ä100} face in parallel with the film face. COPYRIGHT: (C)2004,JPO