发明名称 Method for producing high-purity, granular silicon
摘要 The invention relates to a method for producing hyper-pure granular silicon by decomposing a silicic gas in a reactor consisting of a metallic material. Said reactor is provided with a protective layer of silicon on the side thereof facing the product. The surface of the protective layer is continuously renewed by silicon deposition during the decomposition of the silicic gas, and the diffusion of impurities in the silicon produced is minimised to such an extent that high-purity silicon is obtained, suitable for use in the photovoltaic or semiconductor industry. The invention also relates to a reactor consisting of a metallic material and provided on the inside with a protective layer of silicon, the surface of said layer being continuously renewed during the operation of the reactor. The invention further relates to the use of the reactor for carrying out a method for producing high-purity granular silicon by decomposing a silicic gas.
申请公布号 US2004042950(A1) 申请公布日期 2004.03.04
申请号 US20030416627 申请日期 2003.05.08
申请人 MLECZKO LESLAW;BUCHHOLZ SIGURD;SCHLUTER OLIVER FELIX-KARL;TEJERO EZPELETA MARIA PILAR 发明人 MLECZKO LESLAW;BUCHHOLZ SIGURD;SCHLUTER OLIVER FELIX-KARL;TEJERO EZPELETA MARIA PILAR
分类号 B01J19/02;C01B33/027;(IPC1-7):C01B33/023 主分类号 B01J19/02
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