MAGNETIC TUNNEL JUNCTION

摘要

PROBLEM TO BE SOLVED: To provide an MTJ device capable of fabrication while leaving freedom for making fine adjustments on coercive force and leaving freedom for realizing MR of a corresponding degree, and a memory array comprising the MTJ device. SOLUTION: A magnetic tunnel junction device 200 is provided which comprises a free layer 205 separated by a barrier layer and a pinned layer 260. The free layer 205 comprises a ferry magnetic layer 210 and an antiparallel layer 220. The magnetizing moment of the antiparallel layer 220 is substantially antiparallel with the magnetizing moment of the ferry magnetic layer 210 at least within the predetermined temperatures of the magnetic tunnel junction device 200. The memory array comprising the magnetic tunnel junction device 200 is also provided. COPYRIGHT: (C)2004,JPO