SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having a high emission efficiency in which high luminance light can be emitted with a low driving voltage while reducing power consumption.

SOLUTION: A light emitting layer 103 is formed on the surface of a clad layer 106 and a current layer 105 having a band gap energy lower than that of the light emitting layer 103 is formed on the surface of the light emitting layer 103 in the central part thereof. No barrier layer is provided between the light emitting layers 103 and 105 and since the current layer 105 serves to collect currents flowing above and below a guide layer 104 in the central part, the current passes intensively through a part of the light emitting layer 103 touching the current layer 105.

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