| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an active matrix display device which is not likely to cause peeling of a conductive layer formed on a gate insulating film while using a top gate film transistor using a polycrystal semiconductor in a channel area, and to provide a method for manufacturing the display. <P>SOLUTION: In the active matrix display device provided with the top gate film transistor 20 provided with a channel area 14a consisting of the polycrystal semiconductor, the gate insulating film 15 of the transistor 20 is provided with a plurality of protrusion parts 18 at least on a part of a contacting face with a conductive layer 16 formed on it. <P>COPYRIGHT: (C)2004,JPO</p> |
