| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dot light emitting diode with good yield, which can prevent out-of-dot part light emission. <P>SOLUTION: The light emitting diode comprises an n-type clad layer, an active layer of (Al<SB>x</SB>Ga<SB>1-x</SB>)<SB>y</SB>In<SB>1-y</SB>P(O≤x≤1, O≤y≤1), a p-type clad layer and a p-type current diffusion layer laminated on an n-type semiconductor substrate one by one, and also comprises a light emitting region and a wire bonding region which are adjacent each other. In a region except the light emitting region and the wire bonding region, etching is carried out until the active layer or the n-type clad layer is exposed. A light absorbing layer is further provided on the current diffusion layer in the wire bonding region. A side surface existing on a boundary with the light emitting region inside the light absorbing layer forms a mesa-shape. An electrode part formed on the current diffusion layer inside the light emitting region and an electrode part formed on the light absorbing layer inside the wire bonding region are connected by an electrode part formed on the mesa-shaped side surface of the light absorbing layer. <P>COPYRIGHT: (C)2004,JPO |
