| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a deposition film by plasma-CVD process, which steadily forms a deposition film of uniform thickness and quality and drastically improves a yield in the mass production, by stabilizing a gas flow in a generatrix direction in a reaction vessel, and to provide an apparatus therefor. SOLUTION: The method for forming the deposition film is characterized by using an apparatus having several toroidal raw-gas introduction pipes for introducing a raw gas for forming the film into the above cylindrical reaction vessel, installed in the circumferential direction of the coaxial cylindrical support and in the longitudinal direction of the above cylindrical support. COPYRIGHT: (C)2004,JPO
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