METHOD FOR FORMING DIELECTRIC LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a dielectric layer of a semiconductor device is provided to be capable of improving the reliability of the semiconductor device. CONSTITUTION: A silicon oxide layer(110) is formed on a semiconductor substrate(100). A nitridizing process is carried out on the surface of the silicon oxide layer firstly by using the first gas. A silicon nitride layer(120) is deposited on the resultant structure by using the second gas. Impurities are prevented from penetrating into the semiconductor substrate by carrying out the second process on the silicon nitride layer using the third gas. Preferably, the silicon nitride layer and the silicon oxide layer have predetermined thickness.