| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can be tested in a simple configuration within a short processing time. SOLUTION: If the potential of a bit line pair is always the same even if the word lines to be activated are switched at the time of readout, the output of a NAND circuit 207 turns to an "L". In the case the potential of the bit line changes even once, the output of the NAND circuit 207 turns to an "H". At the time of writing, the output of the NAND circuit 207 turns to the "L". A SALATOUT="H" is inputted at the time of readout and at the time of writing to the gate of a transistor (TR) 208. A SALATOUT2="H" is inputted at the time of writing to the gate of a TR 209. The potential is changed on the bit line pair according to the output of the NAND circuit 207. This potential change is outputted to the outside at the time of readout and is determined as a test result and the test data are written in a memory cell by using the potential change at the time of writing. COPYRIGHT: (C)2004,JPO
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